ANNEALING TEMPERATURE EFFECT ON THE FIELD EMISSION PROPERTIES OF CARBON NANOTUBE FILMS

T. Chen, Z. Sun (), L. L. Wang, Y. W. Chen, P. S. Guo and W. X. Que
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T. Chen: Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, China
Z. Sun: Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, China
L. L. Wang: Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, China
Y. W. Chen: Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, China
P. S. Guo: Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, China
W. X. Que: Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, China

Surface Review and Letters (SRL), 2007, vol. 14, issue 05, 969-972

Abstract: As the carbon nanotubes (CNTs) films are applied to the field emission cathodes in the vacuum devices, heat treatment in the range of 400°C–500°C is often conducted during the device sealing process, especially for glass-based devices. The annealing temperature effect on the field emission of the CNT films prepared by chemical vapor deposition is investigated. The CNT film annealed at 400°C in air contains less amorphous carbon phase, and shows better field emission properties comparing to the as-grown CNT film. Annealing at 450°C causes serious oxidative damage along the tube walls, resulting in the poor field emission performance. The CNTs annealed at 500°C are all burned out. The experiment shows that the sealing temperature at 400°C or below can be conducted in air, while the sealing temperature above 400°C should be done inN2orArambient.

Date: 2007
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DOI: 10.1142/S0218625X07010391

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