SELF-LIMITING GROWTH OF TITANIUM SILICATE AND EFFECTS OF THERMAL ANNEALING ON THE ELECTRICAL PROPERTIES OF TITANIUM SILICATE/SiO2

Seungjae Lee and Kijung Yong ()
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Seungjae Lee: Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea
Kijung Yong: Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea

Surface Review and Letters (SRL), 2007, vol. 14, issue 05, 921-925

Abstract: Titanium silicate thin films were deposited using self-limiting atomic layer growth technique. Grown films showed smooth film surface morphology. As deposited, 8 nm-thick film surface showed an RMS value of 0.43 nm and annealed film showed a smoother surface having RMS of 0.2 nm. Electrical properties of titanium silicate/SiO2bilayer were investigated using capacitance–voltage(C–V)and leakage current-voltage(I–V)measurements. The grown films showed high dielectric properties with low impurity contents and low leakage currents. Upon annealing at 800°C, capacitance slightly decreased, which is likely due to the interfacial reactions. Generally thermal annealing decreased hysteresis inC–Vresults.

Keywords: Titanium silicate; Gate oxide; ALD (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1142/S0218625X07010433

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