CHARACTERISTIC ANALYSIS ONGaNNANOCRYSTALLINE POWDER PREPARED BY SOL–GEL METHOD

Enling Li (), Xuewen Wang, Shanshan Wang and Guican Chen
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Enling Li: Institute of Microelectronics of Xi'an Jiaotong University, Xi'an 710049, P. R. China;
Xuewen Wang: Electronic Information Science and Engineering School, Northwestern University, Xi'an 710068, P. R. China
Shanshan Wang: Electronic Information Science and Engineering School, Northwestern University, Xi'an 710068, P. R. China
Guican Chen: Institute of Microelectronics of Xi'an Jiaotong University, Xi'an 710049, P. R. China

Surface Review and Letters (SRL), 2007, vol. 14, issue 06, 1181-1185

Abstract: Gallium nitride(GaN)nanocrystalline powder has been prepared by sol–gel method. TheGaNpowder has been confirmed as single-crystallineGaNwith wurtzite structure by X-ray diffraction (XRD) and selected-area electron diffraction (SAED), and the diameter of the grains ofGaNpowder changes from 30 to 100 nm under transmission electron microscopy (TEM). Having been excited by 240 nm light at room temperature,GaNpowder has a strong luminescence peak located at 395 nm and a weak luminescence peak located at 295 nm, attributed toGaNband-edge emission and blue-shift of the band-gap emission. Moreover, X-ray photoelectron spectroscopy (XPS) confirms the formation of the bond betweenGaandN, and Raman scattering spectrum confirms A1 (TO) and E1 (TO) vibrational modes ofGaN.

Keywords: GaN; nanocrystalline; sol–gel; luminescence (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1142/S0218625X07010779

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