EFFECT OF EUROPIUM DOPING ON ELECTRICAL PROPERTIES OF PZT FILMS

Chunyu Shao, Jing Wang (), Weijie Dong, Yan Cui and Min Ji
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Chunyu Shao: School of Electronic and Information Engineering, Dalian University of Technology, Dalian 116023, PR China
Jing Wang: School of Electronic and Information Engineering, Dalian University of Technology, Dalian 116023, PR China;
Weijie Dong: School of Electronic and Information Engineering, Dalian University of Technology, Dalian 116023, PR China;
Yan Cui: Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116023, China;
Min Ji: School of Chemical Engineering, Dalian University of Technology, Dalian 116023, PR China

Surface Review and Letters (SRL), 2008, vol. 15, issue 01n02, 1-5

Abstract: Samples of lead zirconate titanatePb(Zr0.53Ti0.47)O3with europium(Eu)doping concentration of 0, 0.5, 1.5, 3 mol% (PEZT) were fabricated by sol–gel method. XRD spectra showed that the introduction ofEuinto PZT favored the growth of (100) orientation. With 3%Eucontent, the preferential orientation of the film converted from (111) to (100) orientation. TheEu-doped PZT films exhibited lower leakage current less than 10-9A/cm2and the behavior of leakage current was discussed in terms of defect chemistry theorem. WhenEucontent was 1.5%, the remanent polarization(Pr)increased to 28 μ C/cm2which was much higher than that of undoped PZT film.

Keywords: PZT film; Eudoped; ferroelectric; leakage current (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08010853

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