DIELECTRIC AND FERROELECTRIC BEHAVIORS OF NOVELPbTiO3/NiFe2O4THIN FILMS PREPARED BY SOL–GEL METHOD

Yanling Dong, Xin Wang, Xiaoyan Chai, Wenjian Weng, Gaorong Han and Piyi Du ()
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Yanling Dong: The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China
Xin Wang: The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China
Xiaoyan Chai: The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China
Wenjian Weng: The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China
Gaorong Han: The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China
Piyi Du: The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China;

Surface Review and Letters (SRL), 2008, vol. 15, issue 01n02, 7-11

Abstract: Ferroelectric/ferromagnetic (ME) biphase composite thin films with the type of(1–x)PbTiO3(PT)–xNiFe2O4(NFO)(x = 1–9)were successfully formedin situby sol–gel process. The dielectric and ferroelectric behaviors of the composite thin films were investigated. The asymmetrical hysteresis loops of the composite arise from the leak current due to low resistivity of NFO. The stronger stress in the thin films due to the strong conjunction between PT and the substrate contributes to the increase (decrease) of the coercive force (the remanent polarization) with increasing the content of PT. The ME composites exhibit slight percolation effect. The high dielectric constant near the percolation threshold is attributed to the "micro-capacitors" in the composite thin films.

Keywords: Magnetoelectric composites; ferroelectric properties; dielectric properties; in situcombination; sol–gel method (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08010865

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