STRUCTURE AND DIELECTRIC PROPERTIES OFLa-DOPED LEAD STRONTIUM TITANATE THIN FILMS DERIVED FROM SOL–GEL METHOD

X. T. Li, C. Wu, W. J. Weng, G. R. Han and P. Y. Du ()
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X. T. Li: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
C. Wu: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
W. J. Weng: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
G. R. Han: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
P. Y. Du: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

Surface Review and Letters (SRL), 2008, vol. 15, issue 01n02, 13-18

Abstract: A series of(Pb0.4Sr0.6)1-xLa2x/3TiO3(PSLT) thin films were deposited on ITO/glass substrates by sol–gel technique. Their phase status, surface morphology, and dielectric properties were studied by X-ray diffraction, scanning electron microscope, and impedance analyzer, respectively. Results show that the PSLT thin films were consisted of tetragonal perovskite phase PSLT thin films forx 0.4. Dielectric properties such as dielectric constants, dielectric tunabilitis, and inharmonic coefficient were characterized as a function of the film composition.

Keywords: Sol–gel processes; PST; thin films; La doping; dielectric properties (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08010877

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