SYNTHESIS OFPb(Mg1/3Nb2/3)O3–PbTiO3FILM ONTiSUBSTRATES BY A SINGLE STEP AT LOW TEMPERATURE

Xiuli Chen and Huiqing Fan ()
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Xiuli Chen: State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
Huiqing Fan: State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China

Surface Review and Letters (SRL), 2008, vol. 15, issue 01n02, 23-27

Abstract: The relaxor ferroelectricPb(Mg1/3Nb2/3)O3–PbTiO3compositions are of interest owing to their excellent dielectric, electromechanical, electro-optical, and other properties. In this paper, the0.80Pb(Mg1/3Nb2/3)O3–0.20PbTiO3(PMN–PT 80/20) films with pure perovskite structure were synthesized by a single step at 150°C. The corresponding oxides were used as starting materials, namelyPbO,MgO,Nb2O5, andTiO2. By using oxides as precursors, we simplified the hydrothermal process, allowing the process to be more economical. The influences of theTimetal substrate on the PMN–PT 80/20 films are investigated. By surveying the variations of films, it was suggested that the substrate reacted with the ions in the solution. The films were smooth and homogeneous. There were no cracks and abnormity crystals on the surface of the films. The thickness was about 20 μm. The frequencies dependence of the dielectric properties of PMN–PT 80/20 films was stable even at a high frequency range over 1 MHz.

Keywords: Pb(Mg1/3Nb2/3)O3–PbTiO3; film; synthesis; low temperature; 66.55.Nq; 77.84.-s; 81.15Lm (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08010890

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