EconPapers    
Economics at your fingertips  
 

ENHANCED DIELECTRIC CHARACTERISTICS OF MANGANESE-DOPED BZT THIN FILMS

J. Zhu (), W. J. Jie, X. H. Wei, W. F. Qin, Y. Zhang and Y. R. Li
Additional contact information
J. Zhu: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
W. J. Jie: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
X. H. Wei: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
W. F. Qin: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
Y. Zhang: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
Y. R. Li: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China

Surface Review and Letters (SRL), 2008, vol. 15, issue 01n02, 29-33

Abstract: Ba(Zr0.2Ti0.8)O3(BZT) and 2 mol%Mnadditional doped BZT (Mn-BZT) thin films were deposited by pulsed laser deposition technique under the same growth conditions onLaAlO3substrates with the bottom electrodes ofLaNiO3. The microstructure of the films was characterized by X-ray diffraction (XRD) in the mode ofθ–2θscan and Φ-scan. The results indicated that BZT film was (001)-oriented_with an in-plane relationship of BZT[100]//LNO[100]//LAO[100]. TheMn-BZT film exhibited higher dielectric constant of 225 at zero electric field, larger dielectric tunability of 59.4%, and lower dielectric loss of 1.8% under an applied electric field of 720 kV/cm. The figure of merit for BZT thin film increased from 19.8 to 33 byMndoping. The enhanced dielectric behavior byMndoping could be mainly attributed to the decrease of oxygen vacancies and the reorientation of the dipolar defect complex of${\rm Mn}^{\prime\prime}_{\rm Ti} - {\rm V}_{\ddot{\rm O}}$.

Keywords: Mndoping; BZT; PLD; 77.55.+f; 68.55.Ln (search for similar items in EconPapers)
Date: 2008
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X08010907
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:15:y:2008:i:01n02:n:s0218625x08010907

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X08010907

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().

 
Page updated 2025-03-20
Handle: RePEc:wsi:srlxxx:v:15:y:2008:i:01n02:n:s0218625x08010907