KINETIC MONTE CARLO SIMULATION OF HETEROEPITAXIAL GROWTH OFInSbBUFFER LAYER AND EFFECTS ONInSb/GaAsFILMS

M. Xiong, M. C. Li (), H. L. Wang and L. C. Zhao
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M. Xiong: School of Material Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
M. C. Li: School of Material Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
H. L. Wang: School of Material Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
L. C. Zhao: School of Material Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China

Surface Review and Letters (SRL), 2008, vol. 15, issue 01n02, 77-80

Abstract: InSbfilms onGaAs(001) substrates have been grown using a two-step method by molecular beam epitaxy (MBE). The Kinetic Monte Carlo (KMC) method, based on solid-on-solid (SOS) model has been introduced to simulate the Volmer–Weber growth ofInSbbuffer layer onGaAssubstrate. The buffer surface becomes rough obviously and produces an undulating profile during the last coverage of the substrate. The undulating buffer surface would play an adverse role in the surface morphology of the followingInSbepilayer. Therefore, the growth ofInSbepilayer before the formation of undulating buffer surface would get a better surface, which has been convinced by the results of atomic force microscope (AFM) observations.

Keywords: Kinetic Monte Carlo (KMC); InSbepilayer; InSbbuffer layer (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08010993

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