EFFECTS OF OPERATING CONDITIONS ON THE DEPOSITION OFGaAsIN A VERTICAL CVD REACTOR

Jae-Sang Baek, Jin-Hyo Boo and Youn-Jea Kim ()
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Jae-Sang Baek: School of Mechanical Engineering, Sungkyunkwan University, Suwon 440-746, Korea;
Jin-Hyo Boo: Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon 440-746, Korea
Youn-Jea Kim: School of Mechanical Engineering, Sungkyunkwan University, Suwon 440-746, Korea;

Surface Review and Letters (SRL), 2008, vol. 15, issue 01n02, 111-116

Abstract: A numerical study is needed to gain insight into the growth mechanism and improve the reactor design or optimize the deposition condition in chemical vapor deposition (CVD). In this study, we have performed a numerical analysis of the deposition of gallium arsenide(GaAs)from trimethyl gallium (TMG) and arsine in a vertical CVD reactor. The effects of operating parameters, such as the rotation velocity of susceptor, inlet velocity, and inlet TMG fraction, are investigated and presented. The three-dimensional model which is used in this investigation includes complete coupling between the thermal-fluid transport and species transport with chemical reaction.

Keywords: CVD; gallium arsenide; reactor design; Arrhenius model; deposition rate (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X0801107X

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