INVESTIGATION ON HETEROSTRUCTURAL OPTOELECTRONIC SWITCHES

Guo der-Feng, Jung-Hui Tsai, Tzu-Yen Weng (), Chih-Hung Yeng, Po-Hsien Lai, Ssu-Yi Fu, Ching-Wen Hung and Wen-Chau Liu
Additional contact information
Guo der-Feng: Department of Electronic Engineering, Air Force Academy, P. O. Box 14-49 Kangshan, Kaohsiung County 820, Taiwan
Jung-Hui Tsai: Department of Electronic Engineering, National Kaohsiung Normal University, 116 Ho-ping 1st Road, Kaohsiung 802, Taiwan
Tzu-Yen Weng: Department of Physics, National Kaohsiung Normal University, 116 Ho-ping 1st Road, Kaohsiung 802, Taiwan
Chih-Hung Yeng: Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
Po-Hsien Lai: Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
Ssu-Yi Fu: Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
Ching-Wen Hung: Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
Wen-Chau Liu: Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

Surface Review and Letters (SRL), 2008, vol. 15, issue 01n02, 139-144

Abstract: GaAs/InGaPandAlGaAs/GaAs/InAlGaPnpn heterostructural optoelectronic switches (HSOSs) have been fabricated to demonstrate the bulk-barrier and potential-spike height effects on the switching. It is seen that the illumination decreases the switching voltageVSand increases the switching currentISin theGaAs/InGaPHSOS characteristics. But in theAlGaAs/GaAs/InAlGaPHSOS, theVSandISpresent contrary trends. These characteristic variation differences in the two HSOSs are mainly due to the photogenerated carriers that affect the bulk-barrier and potential-spike heights.

Keywords: Optoelectronic switch; bulk barrier; potential spike (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08011123

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