LASER DICING OF SILICON WAFER

Yun Tang (), J. Y. H. Fuh, H. T. Loh, Y. S. Wong and Y. K. Lim
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J. Y. H. Fuh: Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576, Singapore
H. T. Loh: Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576, Singapore
Y. S. Wong: Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576, Singapore
Y. K. Lim: Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576, Singapore

Surface Review and Letters (SRL), 2008, vol. 15, issue 01n02, 153-159

Abstract: The effect of various laser processing parameters on the kerf width and cut quality ofSiwafer as well as encapsulatedSiwafer is investigated. The parameters are then optimized to minimize the heat affect zone and obtain the best possible cut quality. It has been found that oxygen is the most suitable assist gas for laser dicing and that the highest gas pressure may not produce the best cut quality. The effect of laser repetition rate, pump energy, feed rate, and number of passes are also studied. Under optimized parameters, the cut quality ofSiwafer using laser dicing is found to be comparable to diamond saw dicing.

Keywords: Laser materials processing; laser dicing; silicon wafer; semiconductor (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08011147

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