NANOSTRUCTURAL ANALYSIS OF AGaN-BASED VIOLET LASER DIODE

J. R. Yang (), H. L. Tsai, T. Y. Wang, H. W. Yen, C. Y. Chen, W. C. Li and H. R. Chen
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J. R. Yang: Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan
H. L. Tsai: Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan
T. Y. Wang: Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan
H. W. Yen: Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan
C. Y. Chen: Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan
W. C. Li: Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan
H. R. Chen: Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan

Surface Review and Letters (SRL), 2008, vol. 15, issue 01n02, 189-193

Abstract: The nanostructure of p-typeAlGaN/GaNstrained-layer superlattice (SLS) cladding in aGaN-based violet laser diode (LD) has been investigated by high-angle annular dark-field (HAADF) scanning-transmission electron microscopy (STEM). The pairs of theAlGaNandGaNlayers in SLS cladding are observed, where theAlGaNandGaNlayers appear as dark and bright bands. It is also found that the threading dislocations disappeared within the SLS; this evidence manifests the role of SLS in suppressing threading dislocation propagation.

Keywords: GaN-based violet laser diode; strained-layer superlattice; threading dislocation; high-angle annular dark-field (HAADF) scanning-transmission electron microscopy (STEM) (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08011202

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