DIELECTRIC CHARACTERISTICS OF BST/BZT/BST MULTILAYER

W. F. Qin (), J. Zhu, J. Xiong, J. L. Tang, W. J. Jie, Y. Zhang and Y. R. Li
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W. F. Qin: State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, 610054, P. R. China
J. Zhu: State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, 610054, P. R. China
J. Xiong: State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, 610054, P. R. China
J. L. Tang: State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, 610054, P. R. China
W. J. Jie: State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, 610054, P. R. China
Y. Zhang: State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, 610054, P. R. China
Y. R. Li: State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, 610054, P. R. China

Surface Review and Letters (SRL), 2008, vol. 15, issue 01n02, 195-200

Abstract: Ba0.6Sr0.4TiO3(BST) andBa0.6Sr0.4TiO3/Ba(Zr0.2Ti0.8)O3/Ba0.6Sr0.4TiO3(BST/BZT/BST) multilayer (ML) films were prepared by pulsed laser deposition on theLaNiO3-coatedLaAlO3substrate. X-ray diffraction analysis revealed that the two kinds of films could be epitaxially grown in pure single-oriented perovskite phases and atomic force microscopy showed that the grain size of ML films was similar to BST films in size. The dielectric properties of the BST and ML thin films were measured at 10 kHz and 300 K with a parallel-plate capacitor configuration. The results revealed that the dielectric tunability for ML films slightly decreased, while the loss decreased synchronously. The figure-of-merit factor value increases from 17.32 for BST films to 42.14 for ML films under an applied electric field of 300 kV/cm. The leakage current density of the BST thin films at a positive bias field of 300 kV/cm decreases from 3.76 × 10-6to 1.25 × 10-7A/cm2for ML films. This work clearly reveals the highly promising potential of BST/BZT/BST multilayer films compared with BST films for application in tunable microwave devices.

Keywords: BST/BZT/BST multilayer films; dielectric constant; leakage current characteristics (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08011238

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