DC CONDUCTION MECHANISMS INAl–SnO2–AlSTRUCTURE DEPOSITED BY THERMAL EVAPORATION

M. Anwar (), I. M. Ghauri, S. A. Siddiqi and Naveed Afzal
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M. Anwar: Physics Department, Government College, Burewala, Pakistan
I. M. Ghauri: Centre for Advanced Studies in Physics, G. C. University, Lahore, Pakistan
S. A. Siddiqi: Centre for Solid State Physics, University of the Punjab, Lahore, Pakistan
Naveed Afzal: Centre for Advanced Studies in Physics, G. C. University, Lahore, Pakistan

Surface Review and Letters (SRL), 2008, vol. 15, issue 03, 207-216

Abstract: The DC conduction mechanisms in metal–insulator–metal sandwich structure based on amorphous thin films ofSnO2have been studied in the thickness range 100–400 nm, in the substrate temperature range 293–543 K, and in the annealing temperature range 473–773 K, and the results are discussed in terms of current theory. It is observed that at low field and low temperature the conduction mechanism is found to obey the hopping model, at higher temperature the conduction takes place by transport in the extended states but at high field the main barrier lowering effect is associated with localized centers. The increase in electrical conductivity with film thickness is caused by the oxygen vacancies and${\rm SnO}_{2-x}({\rm V}_{\rm \ddot{O}})_{x}\, {\rm e}_{2x}^\prime$defects which generate carriers in the films. The increase in electrical conductivity due to an increase in substrate temperature is ascribed to the increasing concentration of ionized donors and hoping of electrons between metal ions in two different valence states. The formation of tin species of lower valence states and doubly ionized oxygen vacancies are thought to be responsible for the increase in electrical conductivity at higher annealing temperature.

Keywords: SnO2amorphous thin films; structural defects; activation energy; tin interstitial; oxygen vacancies; conductivity; Poole–Frenkel effect; 73.40. Rw; 73.61. Jc; 73.50. –h (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08011251

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