OPTICAL AND ELECTRICAL PROPERTIES OFLa2O3FILMS PREPARED BY ION BEAM ASSISTANT ELECTRON BEAM EVAPORATION

Chen Yang, Huiqing Fan (), Shaojun Qiu, Yingxue Xi and Yunfei Fu
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Chen Yang: State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
Huiqing Fan: State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
Shaojun Qiu: State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
Yingxue Xi: State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
Yunfei Fu: State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China

Surface Review and Letters (SRL), 2008, vol. 15, issue 03, 271-275

Abstract: La2O3films were deposited onSi(100)substrates by ion beam assistant electron beam evaporation and were annealed at 450–900°C. Crystalline structure was found to change from amorphous structure to cubic and hexagonal structure with the rise in annealing temperature. The near infrared transmittance of the film annealed at 600°C was relatively high and could be further increased using assistant ion beam in deposition. The maximum leakage current density increased dramatically from 10-7to 10-4A/cm2with the rise in annealing temperature. The film annealed at 600°C with cubic structure had a relatively high dielectric constant of ~18.

Keywords: La2O3films; electron beam evaporation; film structure; optical and electrical properties (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08011354

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