STUDY OF THE STOICHIOMETRIC RATIO OF ONE-STEP ELECTRODEPOSITEDCuInSe2FILMS ON ITO/SODA-LIME GLASS

N. J. Yao, S. M. Huang (), J. B. Chu, H. B. Zhu, Z. Sun and Y. W. Chen
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N. J. Yao: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China
S. M. Huang: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China
J. B. Chu: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China
H. B. Zhu: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China
Z. Sun: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China
Y. W. Chen: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China

Surface Review and Letters (SRL), 2008, vol. 15, issue 04, 419-426

Abstract: Copper indium diselenide (CuInSe2)thin films were grown on indium–tin oxide (ITO)/soda-lime glass using a one-step cathodic electrodeposition process at potentials lower than -0.6 V vs SCE, and in the presence of a large excess ofIn3+. The source solution containedCuCl2,InCl3, andH2SeO3complexed by citric acid. The concentration ofInCl3in the electrochemical bath affected the structure, composition, stoichiometric ratio, and morphological properties of electrodeposited films.CuInSe2films with a chalcopyrite structure and quite good stoichiometry were directly electrodeposited from a solution of 20 mMInCl3, 5 mMCuCl2, and 8 mMH2SeO3. Annealing of theseCuInSe2films in the temperature range from 300°C to 500°C improves their crystallinity and increases their grain size. Good chalcopyriteCuInSe2films with a (112) preferential orientation suitable for the production of efficient solar cells are obtained after annealing at 500°C. The formation mechanism of the ternaryCuInSe2compound during the electrodeposition process was discussed.

Keywords: Electrodeposition; CuInSe2(CIS); chalcopyrite; ITO; Raman spectroscopy; 68.55.-a; 68.55.Jk; 81.10.Jt; 68.37.Hk (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08011548

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