DEPOSITION OFAlNAND OXIDIZEDAlNTHIN-FILMS BY REACTIVE SPUTTERING: CORRELATION BETWEEN FILM GROWTH AND DEPOSITION PARAMETERS

Manuel García-Méndez (), Santos Morales-Rodríguez, Luciano Eliézer Ramírez and Eduardo G. Pérez-Tijerina
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Manuel García-Méndez: Laboratorio de Nanociencias y Nanotecnología, Facultad de Ciencias Físico-Matemáticas de la UANL, División de Posgrado, Manuel L. Barragán S/N, Edif. de Posgrado, Ciudad Universitaria, San Nicolás de los Garza, N.L. 66450, México
Santos Morales-Rodríguez: Programa de Posgrado en Ingeniería Física Industrial, Facultad de Ciencias Físico-Matemáticas de la UANL, División de Posgrado, Manuel L. Barragán S/N, Edif. de Posgrado, Ciudad Universitaria, San Nicolás de los Garza, N.L. 66450, México
Luciano Eliézer Ramírez: Instituto Tecnológico de Saltillo, V. Carranza 2400, Col. Tecnológico, Saltillo, Coahuila, México
Eduardo G. Pérez-Tijerina: Laboratorio de Nanociencias y Nanotecnología, Facultad de Ciencias Físico-Matemáticas de la UANL, División de Posgrado, Manuel L. Barragán S/N, Edif. de Posgrado, Ciudad Universitaria, San Nicolás de los Garza, N.L. 66450, México;

Surface Review and Letters (SRL), 2008, vol. 15, issue 04, 453-458

Abstract: A set ofAlNfilms were deposited by reactive direct current (DC) magnetron sputtering. Films were analyzed with X-ray diffraction and Auger Electron Spectroscopy (AES). There is a correlation between deposition parameters and crystal growth. Depending on the deposition parameters, films can present a hexagonal würzite (P6mm) or cubic zinc-blend (Fm3m) microstructure. Oxygen appears to induce on films a degree of amorphous growth and a distortion of the lattice parameters. For the film with cubic microstructure, AES transitions detected near the surface level at 56 eV and 66 eV were attributed to aluminum-oxide (AlxOy),AlN, and metallicAl.

Keywords: AIN; thin-films; X-ray diffraction; auger electron spectroscopy; deposition parameters (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08011585

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