EFFECTS OF THERMAL EXPANSION COEFFICIENT MISMATCH ON STRUCTURE AND ELECTRICAL PROPERTIES OFTiO2FILM DEPOSITED ONSiSUBSTRATE

Chen Yang, Huiqing Fan (), Shaojun Qiu, Yingxue Xi and Jin Chen
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Chen Yang: State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
Huiqing Fan: State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
Shaojun Qiu: State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
Yingxue Xi: State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
Jin Chen: State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China

Surface Review and Letters (SRL), 2008, vol. 15, issue 04, 487-491

Abstract: Effects of thermal expansion coefficient (CTE) mismatch on structure and electrical properties ofTiO2film deposited onSisubstrate by ion beam assistant electron beam evaporation have been investigated. Because of a high CTE mismatch betweenTiO2film andSisubstrate, microcracks appeared in theTiO2film deposited directly onSisubstrate after the as-deposited film was annealed at 600°C. In order to decrease the CTE mismatch,TiO2film was deposited onSisubstrate which was covered by aZrO2thin layer. As a result, crack–freeTiO2film after annealed at the same temperature was obtained. Meanwhile, corresponding to the crack–free structure, theTiO2thin film has more stable dielectric properties and excellentI–Vcharacteristics.

Keywords: Thin film; deposition; thermal expansion coefficient mismatch; microcracks; electrical properties (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08011639

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