LOWER TEMPERATURE FORMATION OF ALUMINA THIN FILMS THROUGH SOL–GEL ROUTE

S. Riaz, S. Shamaila, B. Khan and S. Naseem ()
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S. Riaz: Centre for Solid State Physics, Punjab University, Lahore 54590, Pakistan;
S. Shamaila: State Key Laboratory of Magnetism, Chinese Academy of Sciences, Beijing 100080, China
B. Khan: Department of Chemistry, LCW University, Lahore, Pakistan
S. Naseem: Centre for Solid State Physics, Punjab University, Lahore 54590, Pakistan

Surface Review and Letters (SRL), 2008, vol. 15, issue 05, 681-688

Abstract: Bayerite sol is spun onto single crystalSisubstrate, after synthesis and optimization, to obtain films of thickness ~ 0.2 μm. The deposited films are room temperature dried and then heated up to a temperature of 350°C in order to obtainAl2O3. Surface and structural changes, during heating, are observed with optical microscopy. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) are used for post-treatment analyses/characterization. The as-deposited and heated samples' surfaces are smooth as seen with optical and scanning electron microscope in case of optimized conditions. XRD patterns show the change from amorphous to crystalline behavior of these films when heated under various conditions. The most stable form of aluminum oxide, i.e. α-Al2O3, is obtained when samples are heated up to a temperature of as low as 350°C. The thin films are also deposited onto sodalime glass substrates in order to confirmAl2O3formation through band gap probing. Photoconduction is used to find the energy band gap, which comes out to be 4.7 eV; lower value is correlated to the defect induced states in the band gap.

Keywords: Alumina; sol–gel; corrundum; low-temperature (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08011858

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