p-GaN/n-SiHETEROJUNCTION PHOTODIODES

L. S. Chuah (), Z. Hassan (), H. Abu Hassan and M. Hussein Mourad
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L. S. Chuah: Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia
Z. Hassan: Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia
H. Abu Hassan: Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia
M. Hussein Mourad: Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia

Surface Review and Letters (SRL), 2008, vol. 15, issue 05, 699-703

Abstract: PN photodiodes, as an alternative form of photodetectors, is based on carrier production in the high-field junction region, and it has a response time considerably faster than that of a photoconductor and is typically in the order of nanoseconds. Photodetectors operating in the short wavelength ultraviolet (UV) region are important devices that can be used in various commercial and military applications. In the present work, we fabricated the p-GaN/n-Siheterojunction photodiode to observe the photoelectric effects. From the results, the current–voltage characteristics of the device show the typical rectifying behavior of heterojunctions. The UV photocurrent measurement was performed using anHg-lamp under a reverse bias.

Keywords: PN photodiodes; heterojunction; photoelectric effect; GaN; Si (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08011871

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