CRITICAL THICKNESS OF EPITAXIAL GROWN SEMICONDUCTOR FILMS WITH STRAINED STRUCTURE

J. C. Li (), M. Li and Q. Jiang
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J. C. Li: Key Laboratory of Automobile Materials of Ministry of Education and Department of Materials Science and Engineering, Jilin University, Changchun 130025, China
M. Li: Key Laboratory of Automobile Materials of Ministry of Education and Department of Materials Science and Engineering, Jilin University, Changchun 130025, China
Q. Jiang: Key Laboratory of Automobile Materials of Ministry of Education and Department of Materials Science and Engineering, Jilin University, Changchun 130025, China

Surface Review and Letters (SRL), 2008, vol. 15, issue 06, 829-832

Abstract: The critical thickness of structural transition from a tetragonal structure to a normal bulk structure for epitaxial ultrathin films deposited on the metallic and semiconductor substrates is thermodynamically considered. It is found that equilibrium between the elastic energy of the tetrahedral structure and the film–substrate interface energy is present when a critical thickness is reached. The predictions of the critical thickness are in agreement with the experimental results of films.

Keywords: Epitaxial film; critical thickness; interface energy; semiconductor; 81.15.Np; 68.55.Jk; 68.35.Md; 81.05.Cy (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08011950

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