STRUCTURAL AND OPTICAL PROPERTIES OFn-TYPE POROUS SILICON: EFFECT OF LIGHT ILLUMINATION

N. Jeyakumaran (), B. Natarajan (), N. Prithivikumaran (), S. Ramamurthy and V. Vasu ()
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N. Jeyakumaran: Department of Physics, VHNSN College, Virudhunagar 626001, Tamilnadu, India
B. Natarajan: Department of Physics, Saraswathi Narayanan College, Madurai 625016, Tamilnadu, India
N. Prithivikumaran: Department of Physics, VHNSN College, Virudhunagar 626001, Tamilnadu, India
S. Ramamurthy: Department of Physics, Gandhigram Rural University, Gandhigram 624302, Tamilnadu, India
V. Vasu: School of Physics, Madurai Kamaraj University, Madurai 625002, Tamilnadu, India

Surface Review and Letters (SRL), 2008, vol. 15, issue 06, 897-901

Abstract: Porous silicon (PS) layers have been prepared fromn-type silicon wafers of (100) orientation. SEM, FTIR, and PL have been used to characterize the morphological and optical properties of PS. The influence of varying light illumination in the anodizing solution, on structural and optical properties of PS, has been investigated. It is observed that pore size increases with light illumination level, attains maximum for 17.5 mW/m2and then decreases. The PL spectrum peak shifts toward the higher energy side, which supports the quantum confinement effect in PS. The FTIR shows that theSi–Hnpeaks are observed at the surface of the PS layer and these chemical species also give raise the PL in PS.

Keywords: Band gap; light illumination; hydrogen bonds; porous silicon; porosity; peak intensity; luminescence; quantum confinement (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08012013

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