MORPHOLOGY AND ELECTRICAL RESISTIVITY OFAuCuNANOFILM ALLOYS

R. D. Maldonado () and A. I. Oliva ()
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R. D. Maldonado: Centro de Investigación y de Estudios Avanzados, del IPN Unidad Mérida, Depto. de Física Aplicada, Km. 6 Antigua Carretera a Progreso, 97310, Mérida, Yucatán, México
A. I. Oliva: Centro de Investigación y de Estudios Avanzados, del IPN Unidad Mérida, Depto. de Física Aplicada, Km. 6 Antigua Carretera a Progreso, 97310, Mérida, Yucatán, México

Surface Review and Letters (SRL), 2008, vol. 15, issue 06, 881-888

Abstract: Au/Cuthin films (33–320 nm thickness) were deposited by thermal evaporation on p-type silicon (100) substrates. Two groups of these bimaterial films were alloyed into a vacuum oven by diffusion. The first group was prepared with 24%Auatomic concentration (i.e. 33, 96, 158, 224, and 320 nm asAuCutotal thickness). The second group was prepared changing theAuatomic concentration from 10% to 90%, with 10%Austeps and similar total thickness (100 nm). Prepared alloys were characterized with atomic force microscopy (AFM), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), and collinear four-probe techniques in order to obtain their morphology, stoichiometry, crystalline structure, and electrical resistivity, respectively. Particularly, electrical resistivity presented abrupt changes with the atomic concentration and the annealing temperature with important differences as compared with pureAuandCuthin films.

Keywords: Thin films; surface morphology; crystallization; diffusion; AuCualloys; electrical resistivity; 61.46.-w; 61.66.Dk; 73.61.At; 71.55.Ak; 72.15.Eb (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08012037

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