EFFECT OFCe-DOPING ON STRUCTURAL AND ELECTRICAL PROPERTIES OF DIELECTRICBi2Ti2O7THIN FILMS

Xiangyang Jing, Baibiao Huang (), Shushan Yao, Qi Zhang, Zeyan Wang, Peng Wang and Liren Zheng
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Xiangyang Jing: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Baibiao Huang: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Shushan Yao: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Qi Zhang: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Zeyan Wang: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Peng Wang: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Liren Zheng: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China

Surface Review and Letters (SRL), 2008, vol. 15, issue 06, 799-803

Abstract: Ce-dopedBi2Ti2O7thin films have been successfully prepared on P-typeSisubstrates by a chemical solution deposition method. The structural properties of the films were studied by X-ray diffraction. The phase ofCe-dopedBi2Ti2O7was more stable than that ofBi2Ti2O7withoutCesubstitution. The films exhibited good insulating properties at room temperature. The dielectric constant of the films annealed at 700°C at 100 kHz was 168 and the dissipation factor was 0.038. All these results showed thatCe-dopedBi2Ti2O7thin films could be used as storage capacitors in DRAM and MOS.

Keywords: Deposition; dielectrics; electrical properties; thin films (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08012177

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