INFLUENCE OFAlMONOLAYERS ON THE PROPERTIES OFAlNLAYERS ONSi(111)

L. S. Chuah (), Z. Hassan () and H. Abu Hassan
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L. S. Chuah: Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia
Z. Hassan: Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia
H. Abu Hassan: Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia

Surface Review and Letters (SRL), 2009, vol. 16, issue 01, 99-103

Abstract: High-quality aluminum nitride(AlN)layers with full width at half maximum (FWHM) values of 11 arcmin were grown by plasma-assisted molecular-beam epitaxy onSi(111)substrates.AlNnucleation layers are being investigated for the growth ofGaNonSi. Growth usingAlNbuffer layers leads toAl-polar films, with surfaces strongly dependent on the flux conditions used. Flat surfaces can be obtained by growing asAl-rich as possible, althoughAldroplets tend to form. Before starting theAlNgrowth, a few monolayers ofAlare deposited on the substrate to avoid the formation ofSi3N4. X-ray diffraction (XRD) techniques were employed to determine the surface and structural quality of the layers. XRD revealed that monocrystalline AlN was obtained. BestAlNfilms were obtained at high substrate temperatures (875°C) and III/V ratios close to stoichiometry.

Keywords: III–V nitrides; molecular beam epitaxy; XRD; AlN; Si(111) (search for similar items in EconPapers)
Date: 2009
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DOI: 10.1142/S0218625X09012354

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