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ELECTRONIC STRUCTURE AND BAND BENDING OF MODULATION-DOPEDGaAs/AlxGa1-xAsSYMMETRIC AND ASYMMETRIC DOUBLE QUANTUM WELLS UNDER AN APPLIED ELECTRIC FIELD

F. Ungan, E. Kasapoglu (), H. Sari and I. Sökmen
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F. Ungan: Cumhuriyet University, Physics Department, 58140 Sivas, Turkey
E. Kasapoglu: Cumhuriyet University, Physics Department, 58140 Sivas, Turkey
H. Sari: Cumhuriyet University, Physics Department, 58140 Sivas, Turkey
I. Sökmen: Dokuz Eylül University, Physics Department, 35160 Izmir, Turkey

Surface Review and Letters (SRL), 2009, vol. 16, issue 01, 105-110

Abstract: In this study, we have calculated theoretically the effects of the electric field and doping concentration on the sub-band energies, the electron population, and total charge density in modulation-doped symmetric and asymmetricGaAs/Al0.33Ga0.67Asdouble quantum wells. Electronic properties of the system are determined by the solving the Schrödinger and Poisson equations self-consistently in the effective-mass approximation. The application of an electric field in the growth direction of the system causes a polarization of the carrier distribution and shifts the sub-band energies, which may be used to control and modulate intensity output devices. In an asymmetric double-quantum-well structure, the effects mentioned above appear more clearly.

Keywords: Low-dimensional systems; double quantum well (search for similar items in EconPapers)
Date: 2009
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DOI: 10.1142/S0218625X09012366

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