THE SURFACE AND INTERFACE BEHAVIOR OF EMITTER REGION OF SOLAR CELLS IN PRODUCT LINE

F. Li (), Z. Q. Ma, B. He, X. J. Meng, C. Y. Zhou and N. S. Zhang
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F. Li: SHU-SOEN's R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, P. R. China
Z. Q. Ma: SHU-SOEN's R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, P. R. China
B. He: SHU-SOEN's R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, P. R. China
X. J. Meng: SHU-SOEN's R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, P. R. China
C. Y. Zhou: SHU-SOEN's R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, P. R. China
N. S. Zhang: SHU-SOEN's R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, P. R. China

Surface Review and Letters (SRL), 2009, vol. 16, issue 02, 241-248

Abstract: Based on the Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), the specific surface and interface characteristics of emitter region of commercial mono-crystalSisolar cells were examined. Four chemical compositionsC,O,Si, andPwere detected, and the atomic concentrations (%) ofCandOat the surface were much higher than their solid solubility in mono-crystalSi. The high concentration ofCandOat the surface was attributed to adhered remains. The single elementSi, stable oxideSiO2, as well as intermediate oxidation states such asSi1+andSi3+corresponding toSi2OandSi2O3, respectively, have been analyzed. The atomic concentrations (%) of these compositions and their respective chemical states at the surface and interface are likely correlative to the various defects such as electronic-like ramification of hanging bonds, vacancy cluster, or dislocations. Furthermore, the normalized quantum efficiency (QE) of the solar cells made from the wafers was measured to be lower than 74% at short wavelength (

Keywords: Surface and interface states; solar cells (search for similar items in EconPapers)
Date: 2009
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DOI: 10.1142/S0218625X09012548

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