SURFACE METALIZATION ON THE PHOTO-EMISSION, PHOTO-ABSORPTION AND CORE-LEVEL SHIFT OF NANOSOLID SILICON

Likun Pan (), Haibo Li, Zhuo Sun and Changqing Sun
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Likun Pan: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai, 200062, China
Haibo Li: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai, 200062, China
Zhuo Sun: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai, 200062, China
Changqing Sun: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

Surface Review and Letters (SRL), 2009, vol. 16, issue 02, 265-270

Abstract: Cu,Al, andTifilms of ~ 10 nm thickness were deposited on porous silicon (PS) at room temperature using Filtered Cathodic Vacuum Arc system and annealed at 800°C for 10 min in vacuum. The PS layers were obtained by anodization ofSiwafer. X-ray photoelectron spectroscopy, photoluminescence (PL), photo-absorption (PA), and X-ray diffraction studies revealed that before annealing justCu-deposited sample exhibited PL blueshift, PA redshift, andSi-2plevel shift due to theCudiffusion at the surface of PS. While after annealing,Cu- andTi-deposited samples exhibited obvious PA redshift andSi-2plevel shift, which arise from the crystal field variation due to the formation ofCu/Tisilicides at the surface as well as the conduction electronic transportation.

Keywords: Porous silicon; metalization; crystal field (search for similar items in EconPapers)
Date: 2009
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DOI: 10.1142/S0218625X09012573

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