OPTICAL TRANSITION OF POROUS SILICON PREPARED AT DIFFERENT ANODIZATION TEMPERATURES

Likun Pan (), Haibo Li, Zhuo Sun and Changqing Sun
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Likun Pan: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai 200062, China
Haibo Li: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai 200062, China
Zhuo Sun: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai 200062, China
Changqing Sun: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

Surface Review and Letters (SRL), 2009, vol. 16, issue 03, 351-354

Abstract: Photoluminescence, photoabsorption, and X-ray photoelectron spectroscopic study revealed that an optical transition of porous silicon from red-shift to blue-shift, andSi-2p binding energy transition from low to high at a critical anodization temperature, 343 K. Possible origin for the reverse variations happening at temperature below and above the critical temperature is discussed.

Keywords: Porous silicon; anodization temperature; optical transition (search for similar items in EconPapers)
Date: 2009
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DOI: 10.1142/S0218625X09012706

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