DEPOSITION OF SINGLE-PHASECuInSe2THIN FILMS UNDER LOW VACUUM LEVEL BY A TWO-STAGE GROWTH TECHNIQUE

J. B. Chu, H. B. Zhu, Z. A. Wang, Z. Q. Bian, Z. Sun, Y. W. Chen and S. M. Huang ()
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J. B. Chu: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China
H. B. Zhu: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China
Z. A. Wang: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China
Z. Q. Bian: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China
Z. Sun: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China
Y. W. Chen: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China
S. M. Huang: Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China

Surface Review and Letters (SRL), 2009, vol. 16, issue 03, 381-386

Abstract: Single-phaseCuInSe2films were grown by high vapor selenization ofCuInalloy precursors within a partially closed graphite box. TheCuInprecursors were prepared usingCuxInyalloy targets with different composition rates under low vacuum level by a homemade sputtering system. TheCuandIncomposition rates of the used targets are 11:9, 10:10, and 9:11, respectively. The metallic precursor films were selenized using a two-step temperature profile, i.e. at 250°C and 400–500°C, respectively. The influence of the temperature at the second selenization step on the quality of the CIS absorbing layers was investigated. The CIS films were characterized by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis, and Raman spectroscopy. The deposited CIS absorbers selenized at a high temperature of 500°C for 30 min exhibited a single-phase chalcopyrite structure with a preferential orientation in the (112) direction. These layers display uniform, large, and densely packed crystals with a grain size of about 3–5 μm. Cadmium sulfide buffer layer was manufactured by chemical bath deposition method. BilayersZnO/ZnO:Alwere prepared by RF magnetron sputtering deposition. CIS solar cells with an efficiency of about 6.5% were produced without antireflective films. The method to fabricate CIS solar cells by a combination of the low vacuum sputtering deposition and the graphite box selenization process has provided a simple control process and shown a promising potential for developing high efficient and low-costCuInSe2solar cells.

Keywords: CuInSe2; solar cell; sputtering; selenization (search for similar items in EconPapers)
Date: 2009
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DOI: 10.1142/S0218625X09012755

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