COMPARISON ON THE EFFECT OFSrRuO3ANDLa0.5Sr0.5CoO3BOTTOM ELECTRODE ON DIELECTRIC PROPERTIES OFBa0.6Sr0.4TiO3THIN FILMS PREPARED BY PULSED LASER DEPOSITION

Wenfeng Qin (), Jie Xiong and Yanrong Li
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Wenfeng Qin: Aviation Engineering Institute, Civil Aviation Flight University of China, Guanghan 618307, China
Jie Xiong: State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronics, Science and Technology of China, Chengdu 610054, China
Yanrong Li: State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronics, Science and Technology of China, Chengdu 610054, China

Surface Review and Letters (SRL), 2009, vol. 16, issue 03, 493-497

Abstract: The dielectric properties ofBa0.6Sr0.4TiO3(BST) thin films deposited usingSrRuO3(SRO) materials as bottom electrode were compared with those of the films grown usingLa0.5Sr0.5CoO3(LSCO) materials as bottom electrode. X-ray diffraction scanning revealed that the two kinds of films could be epitaxially grown in pure single-oriented perovskite phases and atomic force microscopy showed that the root mean square roughness of BST/SRO films were similar to BST/LSCO films. The dielectric properties of the BST/SRO and BST/LSCO thin films were measured at 10 kHz and 300 K with a parallel-plate capacitor configuration. Compared with BST/LSCO, the dielectric tunability for BST/SRO films slightly decreased, while the loss decreased synchronously. The figure of merit factor value increases from 25.67 for BST/LSCO films to 48.76 for BST/SRO films under an applied voltage of 6 V. The leakage current density of the thin films at a positive voltage of 2 V decreases from2.41 × 10-7A/cm2for BST/LSCO to8.41 × 10-8A/cm2for BST/SRO. This phenomenon is ascribed to the smaller strain induced in BST/SRO materials.

Keywords: Thin film; electrode; BST; LSCO/SRO (search for similar items in EconPapers)
Date: 2009
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DOI: 10.1142/S0218625X09012901

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