STRUCTURE AND FERROELECTRIC PROPERTIES OFBi0.95La0.05FeO3FILM ON INDIUM TIN OXIDE (ITO)/GLASS SUBSTRATE

Qiang Gao () and Wei Zheng
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Qiang Gao: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
Wei Zheng: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China

Surface Review and Letters (SRL), 2009, vol. 16, issue 04, 503-506

Abstract: Bi0.95La0.05FeO3(BLFOx=0.05)film was fabricated on indium tin oxide/glass substrate using a metal organic decomposition method. No secondary phase can be observed in the well crystallized and predominantly (110)-orientedBLFOx=0.05film. Well-saturatedP - Ehysteresis loops with the remanent polarization of 60.7 μC/cm2can be obtained inBLFOx=0.05film due to the low leakage currents as well as the preferred orientation of the (110) peak. The content of oxygen vacancies in the film is considered to be the dominant factor affecting the asymmetry ferroelectric properties and leakage currents.

Keywords: Bi0.95La0.05FeO3film; (ITO)/Glass substrate; ferroelectric (search for similar items in EconPapers)
Date: 2009
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DOI: 10.1142/S0218625X09013037

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