PROPERTIES OF(Bi0.92Ce0.08)2Ti2O7THIN FILMS PREPARED ONSi(100)BY CHEMICAL SOLUTION DECOMPOSITION

Guanghui Xu, Xiangyang Jing, Yin Zhang and Baibiao Huang ()
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Guanghui Xu: College of Chemistry and Chemical Engineering, China University of Petroleum, Qingdao 266555, P. R. China
Xiangyang Jing: Shandong Electric Power College, Jinan 250002, P. R. China
Yin Zhang: Physics Department, Shandong Institute of Education, Jinan 250013, P. R. China
Baibiao Huang: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China

Surface Review and Letters (SRL), 2009, vol. 16, issue 06, 869-873

Abstract: (Bi0.92Ce0.08)2Ti2O7thin films have been successfully prepared on P-typeSi(100)substrates by a chemical solution decomposition method. The structural properties of the films were studied by X-ray diffraction. The phase stability ofBi2Ti2O7was improved afterCeions were doped. The dielectric constants of(Bi0.92Ce0.08)2Ti2O7thin films annealed at 650° and 700°C were higher than that ofBi2Ti2O7withoutCemodification. The thin films annealed at 650°C showed the highest permittivity. The memory windows in theC–Vloops were studied, indicating that the thin films were not ferroelectric thin films. All of these results showed thatCe-dopedBi2Ti2O7thin films had potential for DRAM and MOS applications.

Keywords: Dielectric constant; dielectric loss; dielectric properties; thin films (search for similar items in EconPapers)
Date: 2009
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DOI: 10.1142/S0218625X09013414

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