PREFERENTIAL ORIENTATION GROWTH OFAlNTHIN FILMS ONSi(111)SUBSTRATES BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

L. S. Chuah (), Z. Hassan and H. Abu Hassan
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L. S. Chuah: Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia
Z. Hassan: Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia
H. Abu Hassan: Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia

Surface Review and Letters (SRL), 2009, vol. 16, issue 06, 925-928

Abstract: This article reports the use of plasma-assisted molecular beam epitaxy (MBE) to growAlNonSi(111)substrate at 850°C under UHV conditions for 15, 30, and 45 min. The films were characterized by high-resolution X-ray diffraction (HR-XRD) and micro-Raman spectroscopy. XRD measurement revealed that theAlNwas epitaxially grown onSi(111). Micro-Raman result showed that all the allowed Raman modes ofAlNandSiwere clearly visible. Fourier transform infrared (FTIR) spectroscopy has been used to investigate theA1(LO) andE1(TO) modes with frequencies (890–899) cm-1and (668–688) cm-1, respectively. The results are in good agreement with reported phonon frequencies of AlN grown onSi(111).

Keywords: AlN; Si; MBE; FTIR (search for similar items in EconPapers)
Date: 2009
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DOI: 10.1142/S0218625X09013499

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