COMPLEX IMPEDANCE SPECTROSCOPY ONZnO-B2O3DOPED(Ba, Sr)TiO3CERAMICS

Sang-Ho Moon, Yong-Su Ham and Jung-Hyuk Koh
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Sang-Ho Moon: Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea
Yong-Su Ham: Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea
Jung-Hyuk Koh: Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea

Surface Review and Letters (SRL), 2010, vol. 17, issue 01, 27-32

Abstract: BST ceramics with doping of 1, 3, and 5 wt.%ZnBOwere prepared by the conventional mixed oxide method and sintered at 1100°. X-ray diffraction analyses were carried out to verify the structural properties. 1, 3, and 5 wt.%ZnBOdoped BST ceramics were crystallized with weak tetragonal structure at 1100°C. The grain growth behavior and shapes were investigated by scanning electron microscopy images. The electrical properties of 1, 3, and 5 wt.%ZnBOdoped BST ceramics were investigated by impedance spectroscopy at the different temperatures (350, 375, and 400°C). Impedance spectroscopy data presented in Nyquist plot show the existence of both grain and grain boundary effects in all specimens. 1, 3, and 5 wt.%ZnBOdoped BST ceramics showed negative temperature coefficient of resistance (NTCR). Also, the capacitances and resistances of grains and grain boundaries for 1, 3, and 5 wt.% doped BST ceramics were simulated through equivalent circuit with the parallelly connected capacitors and resistors. The capacitance and resistance were decreased when temperature andZnBOdopants were increased.

Keywords: BST ceramics; impedance spectroscopy; capacitance (search for similar items in EconPapers)
Date: 2010
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DOI: 10.1142/S0218625X10013606

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