METAL-DOPEDZnOTHIN FILMS: SYNTHESIS, ETCHING CHARACTERISTIC, AND APPLICATION TEST FOR ORGANIC LIGHT EMITTING DIODE (OLED) DEVICES

Sang-Hun Nam (), Myoung-Hwa Kim, Dong Geun Yoo, Seong Hun Jeong, Doo Yong Kim, Nae-Eung Lee and J.-H. Boo ()
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Sang-Hun Nam: Department of Chemistry and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon 440-746, Korea
Myoung-Hwa Kim: Department of Chemistry and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon 440-746, Korea
Dong Geun Yoo: Department of Chemistry and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon 440-746, Korea
Seong Hun Jeong: Department of Chemistry and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon 440-746, Korea
Doo Yong Kim: School of Materials Engineering, Sungkyunkwan University, Suwon 440-746, Korea
Nae-Eung Lee: School of Materials Engineering, Sungkyunkwan University, Suwon 440-746, Korea
J.-H. Boo: Department of Chemistry and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon 440-746, Korea

Surface Review and Letters (SRL), 2010, vol. 17, issue 01, 121-127

Abstract: Metal-dopedZnOfilms with various metal contents (Al,AgandLiof 0–10 wt.%) were prepared by RF magnetron sputtering system with specially designedZnOtargets. The structural, optical and electrical properties of MZO films depended on the type and content of doping in target. Electrical resistivity of LZO thin films increased with increasingLidoping amounts between 0 and 4 wt.%, suggesting that an epitaxial LZO film has high resistivity. We observed morphology in pureZnOfilms by using different etchant. In addition, etching rate were contrasted with the etchant concentration and pH. The etching rate is proportional exponentially to pH value. These data will be the technical basis for TCO application. Also, the dry etching rate decreased with increasing theCl2concentration inCH4/H2/Ar+ additiveCl2gas mixture but metal dopants were etched effectively.

Keywords: Metal-dopedZnOthin films; optical and electrical property; etching; organic light emitting diode (search for similar items in EconPapers)
Date: 2010
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DOI: 10.1142/S0218625X10014065

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