HYDROGENATED AMORPHOUS/NANOCRYSTALLINE SILICON THIN FILMS ON POROUS ANODIC ALUMINA SUBSTRATE

Sang-Ok Kim, Aliaksandr Khodin and Joong Kee Lee ()
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Sang-Ok Kim: Battery Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Seongbuk-gu, Seoul 136-791, Republic of Korea
Aliaksandr Khodin: Battery Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Seongbuk-gu, Seoul 136-791, Republic of Korea
Joong Kee Lee: Battery Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Seongbuk-gu, Seoul 136-791, Republic of Korea

Surface Review and Letters (SRL), 2010, vol. 17, issue 03, 283-288

Abstract: Hydrogenated amorphous and nanocrystalline silicon thin films were grown on porous anodic alumina substrates using electron cyclotron resonance-chemical vapor deposition technique from argon, hydrogen and silane gas composition. The structural characterization of the deposited hydrogenated silicon films were performed by scanning electron microscopy, Raman spectroscopy, and X-ray diffraction studies. The results revealed that mixed amorphous/nanocrystalline silicon phases with specific novel morphology were obtained on textured surfaces. The evolution of the film on ripple-like surface exhibited amorphous dominant structure, however, the film deposited on tipped/ribbed surface consisted of amorphous and nanocrystalline phases composite. The growth process strongly depends on the textured substrate pattern, which influences on the nanostructure shapes and crystallinity.

Keywords: Hydrogenated amorphous silicon; porous anodic alumina; chemical vapor deposition; textured surfaces; Raman spectra; X-ray diffraction (search for similar items in EconPapers)
Date: 2010
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DOI: 10.1142/S0218625X10013679

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