PROPERTIES OF COPPER LAYER ONSi(100)FROMCu(dmamb)2

Seong-Eon Jin, Dohan Lee, Seungmoo Lee, Jong-Mun Choi, Bumjoon Kim, Chang Gyoun Kim, Tack-Mo Chung and Dong-Jin Byun ()
Additional contact information
Seong-Eon Jin: Department of Material Science Engineering, Korea University, 501 Anam dong, Seongbuk gu, Seoul 136-713, South Korea
Dohan Lee: Department of Material Science Engineering, Korea University, 501 Anam dong, Seongbuk gu, Seoul 136-713, South Korea
Seungmoo Lee: Department of Material Science Engineering, Korea University, 501 Anam dong, Seongbuk gu, Seoul 136-713, South Korea
Jong-Mun Choi: Department of Material Science Engineering, Korea University, 501 Anam dong, Seongbuk gu, Seoul 136-713, South Korea
Bumjoon Kim: Department of Material Science Engineering, Korea University, 501 Anam dong, Seongbuk gu, Seoul 136-713, South Korea
Chang Gyoun Kim: Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600, South Korea
Tack-Mo Chung: Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600, South Korea
Dong-Jin Byun: Department of Material Science Engineering, Korea University, 501 Anam dong, Seongbuk gu, Seoul 136-713, South Korea

Surface Review and Letters (SRL), 2010, vol. 17, issue 03, 307-310

Abstract: Cuseed layer was deposited by chemical vapor deposition using newCuprecursor,Cu(dmamb)2. TheCulayers still need the barrier layer to prevent the diffusion, soTaandTiwere used for the barrier layer onSi(100). Low temperature (LT) copper buffer layer was introduced and the effect of the buffer on theCufilms was investigated. The grownCulayers were analyzed using FESEM, XRD, and four point probe measurement. TheCuseed layers were successfully deposited usingCu(dmamb)2precursor. Better thickness uniformity was obtained in theCufilms with the LTCubuffer, which lowered the electrical resistivity.

Keywords: CVD; buffer layer; barrier layer; Cu(dmamb)2; diffusion (search for similar items in EconPapers)
Date: 2010
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X10013801
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:17:y:2010:i:03:n:s0218625x10013801

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X10013801

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().