IN SITUEXAMINATIONS OF MECHANICAL DICING-INDUCED DAMAGE IN SEMICONDUCTOR WAFERS

Seong-Min Lee ()
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Seong-Min Lee: Department of Material Science and Engineering, University of Incheon, 177 Dohwa-dong, Nam-ku, Incheon 402-749, South Korea

Surface Review and Letters (SRL), 2010, vol. 17, issue 03, 317-321

Abstract: This work illustrates how the separation of a semiconductor wafer into individual devices occurs during conventional mechanical dicing.In situexaminations indicate that the final separation of the wafer takes place before the dicing blade has fully penetrated its active surface. Thus, it was predicted that mechanical dicing-induced damage in the separated device patterns would be due to other mechanical actions rather than the grinding action between the diamond particles embedded in the blade and the wafer. Based on thein situexaminations, it was experimentally tested how manipulating the revolving speed of the dicing blade affected the prevention of dicing-induced damage to device patterns. The experimental results show that among various mechanical actions, the impact stress due to the revolving action of the blade could be the most possible candidate for damage in the device pattern on the final uncut semiconductor wafer.

Keywords: Silicon wafer; device pattern; sawing blade; dicing; crack (search for similar items in EconPapers)
Date: 2010
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DOI: 10.1142/S0218625X10013874

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