ENHANCEMENT OF SUPERCONDUCTIVITY OFPbULTRA-THIN FILMS BY THE INTERFACE EFFECT

Wen-Juan Li, Yu-Jie Sun, Tong Zhang, Xie-Gang Zhu, Guang Wang, Jin-Feng Jia, Xucun Ma, Xi Chen and Qi-Kun Xue ()
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Wen-Juan Li: Institute of Physics, The Chinese Academy of Sciences, Beijing 100190, China
Yu-Jie Sun: Key Laboratory of Atomic and Nanosciences, Department of Physics, Tsinghua University, Beijing 100084, China
Tong Zhang: Institute of Physics, The Chinese Academy of Sciences, Beijing 100190, China
Xie-Gang Zhu: Key Laboratory of Atomic and Nanosciences, Department of Physics, Tsinghua University, Beijing 100084, China
Guang Wang: Key Laboratory of Atomic and Nanosciences, Department of Physics, Tsinghua University, Beijing 100084, China
Jin-Feng Jia: Key Laboratory of Atomic and Nanosciences, Department of Physics, Tsinghua University, Beijing 100084, China
Xucun Ma: Institute of Physics, The Chinese Academy of Sciences, Beijing 100190, China
Xi Chen: Key Laboratory of Atomic and Nanosciences, Department of Physics, Tsinghua University, Beijing 100084, China
Qi-Kun Xue: Institute of Physics, The Chinese Academy of Sciences, Beijing 100190, China;

Surface Review and Letters (SRL), 2010, vol. 17, issue 04, 437-440

Abstract: We have studied the superconductivity ofPbultra-thin films with thickness from 1 monolayer (ML) to 7 ML grown onSi(111)by molecular beam epitaxy.In situlow temperature scanning tunneling spectroscopy (STS) and angle-resolved photoemission spectroscopy (ARPES) measurements were performed on the films. It is suggested that the interface effect plays a critical role in enhancing the electron-phonon coupling, which consequently increases the superconducting transition temperature when a film reaches to the two-dimensional limit.

Keywords: Superconductivity; interface; electron-phonon; STM/STS; ARPES (search for similar items in EconPapers)
Date: 2010
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DOI: 10.1142/S0218625X10014235

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