PREPARATIONS OF ZINC OXIDES AND CHARACTERIZATION OF THE PHOTOVOLTAIC BEHAVIOR USING A SCANNING KELVIN PROBE

Y. He, W. Zhi and B. O. Zhou
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Y. He: School of Mechanical Engineering, Changchun University, Changchun, Jilin 130022, P. R. China
W. Zhi: School of Mechanical Engineering, Changchun University, Changchun, Jilin 130022, P. R. China
B. O. Zhou: School of Mechanical Engineering, Changchun University, Changchun, Jilin 130022, P. R. China

Surface Review and Letters (SRL), 2010, vol. 17, issue 05n06, 451-455

Abstract: Surface photovoltage of semiconductors depend strongly on their electronic structures, in particular, their Fermi energy level. This offers a possibility to characterize photoelectronic behavior using the Kelvin probe structure by measurements of work function (WF). In this paper,ZnOfilms were prepared using the CVD method and their microstructures and morphology were characterized using the XRD and SEM. Furthermore, photovoltage evolution and WF of selectedZnOsamples were measured using a scanning Kelvin probe (SKP) system. It is found that the surface photovoltage and its time-resolved evolution process as well as the energy level structure ofZnOfilms can be correlated to WF very well. The present study therefore provides a simple and practical methodology for the characterization of photovoltaic behavior of semiconductor films.

Keywords: Photovoltaic; films (search for similar items in EconPapers)
Date: 2010
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DOI: 10.1142/S0218625X10014272

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