PREPARATION AND FERROELECTRIC PROPERTY OF (100)-ORIENTEDCa0.4Sr0.6Bi4Ti4O15THIN FILM ONPt/Ti/SiO2/SiSUBSTRATE

Suhua Fan (), Quande Che and Fengqing Zhang
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Suhua Fan: College of Materials Science and Technology, Shandong Jianzhu University, Jinan 250101, China
Quande Che: College of Materials Science and Technology, Shandong Jianzhu University, Jinan 250101, China
Fengqing Zhang: College of Materials Science and Technology, Shandong Jianzhu University, Jinan 250101, China

Surface Review and Letters (SRL), 2010, vol. 17, issue 05n06, 445-449

Abstract: The (100)-orientedCa0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi)thin film was successfully prepared by a sol-gel method onPt/Ti/SiO2/Sisubstrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-orientedC0.4S0.6BTithin film with degree of orientation ofI(200)/I(119)= 1.60was prepared by preannealing the film at 400°C for 3 min followed by rapid thermal annealing at 800°C for 5 min. SEM analysis further indicated that the (100)-orientedC0.4S0.6BTithin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 μC/cm2and 85 kV/cm, respectively.

Keywords: Ferroelectric thin film; Ca0.4Sr0.6Bi4Ti4O15; orientation (search for similar items in EconPapers)
Date: 2010
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DOI: 10.1142/S0218625X10014351

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