CHARACTERIZATION OF NICKEL OXIDE THIN FILM — DC REACTIVE MAGNETRON SPUTTERING

K. Ashok
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K. Ashok: School of Advanced Materials Engineering, Chonbuk National University, Deokjin-dong 664-14, Chonju, 561-756, South Korea;

Surface Review and Letters (SRL), 2011, vol. 18, issue 01n02, 11-15

Abstract: Nickel oxide(NiO)thin films were deposited on glass substrates by reactive direct current (DC) magnetron sputtering of aNitarget in anAr/O2mixture. The effect of thickness (0.2 μm, 0.4 μm and 1 μm) on the structural and surface morphological properties ofNiOthin films was investigated. These films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM). The films were cubicNiO, with preferred orientation in the (111) direction at lower deposition time (10 mins). At higher deposition time (60 mins) the preferred orientation shifted to (200) plane. Electrochemical behavior ofNiOthin films for different thickness samples were analyzed between the electrode potential ‑0.2 and 0.8 V vs scanning calomel electrode (SCE) in both anodic and cathodic directions and the current responses were measured.

Keywords: Thin films; XRD; AFM; cyclic voltammetry (CV) (search for similar items in EconPapers)
Date: 2011
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DOI: 10.1142/S0218625X11014424

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