STUDY OF THE STRUCTURE AND PROPERTIES OF(Bi1-xCex)2Ti2O7THIN FILMS PREPARED BY CHEMICAL SOLUTION DECOMPOSITION METHOD

Xiangyang Jing (), Yangbo Hou, Xiaoyang Zhang and Xiaoyan Qin
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Xiangyang Jing: Shandong Electric Power Institute, Jinan 250002, P. R. China
Yangbo Hou: Heze Branch of Shandong Special Equipment Inspection Institute, Heze 274000, P. R. China
Xiaoyang Zhang: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Xiaoyan Qin: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China

Surface Review and Letters (SRL), 2011, vol. 18, issue 01n02, 17-21

Abstract: (Bi1-xCex)2Ti2O7thin films were grown onp-Si〈100〉 substrates by chemical solution decomposition method. The relationship between the doping levels of cerium ions and the phase transition temperatures was studied. The doping of cerium ions could improve the phase stability ofBi2Ti2O7, and the reason was comprehensively explained by the charge compensating theory. The doping ofCeions enhances the crystallization temperature, which make the crystallization difficult, so the amount of cerium ions should be kept appropriate. The dielectric properties of(Bi1-xCex)2Ti2O7thin films with differentXvalues at different temperatures and different doping levels were listed, and the latent variation tendency was found. When the annealing temperature was 650–700°C andX = 0.12or 0.16, the thin films showed better dielectric properties than the others.

Keywords: Thin film; phase stability; dielectric constant; annealing (search for similar items in EconPapers)
Date: 2011
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DOI: 10.1142/S0218625X11014436

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