TUNABLE MAGNETIC AND ELECTRICAL PROPERTIES OFCo-DOPEDZnOFILMS BY VARYING OXYGEN PARTIAL PRESSURE

L. G. Wang (), H. W. Zhang, X. L. Tang, Y. X. Li and Z. Y. Zhong
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L. G. Wang: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic, Science and Technology of China, Chengdu 610054, China
H. W. Zhang: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic, Science and Technology of China, Chengdu 610054, China
X. L. Tang: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic, Science and Technology of China, Chengdu 610054, China
Y. X. Li: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic, Science and Technology of China, Chengdu 610054, China
Z. Y. Zhong: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic, Science and Technology of China, Chengdu 610054, China

Surface Review and Letters (SRL), 2011, vol. 18, issue 03n04, 91-95

Abstract: High qualityCo-dopedZnOfilms with good reproducibility have been prepared under different oxygen partial pressure by radio-frequency magnetron sputtering. These films were characterized using numerous characterization techniques including X-ray diffraction, electrical transport, and magnetization measurements. The effect of oxygen partial pressure on the structural, magnetic, and electrical properties ofCo-dopedZnOfilms has been systematically studied. It was found that the structural, magnetic, and electrical properties ofCo-dopedZnOfilms are dependent on oxygen partial pressure. The saturated magnetization ofCo-dopedZnOfilms rapidly increases with decreasing oxygen partial pressure, whereas the resistivity decreases with decreasing oxygen partial pressure. Our findings indicate that the magnetic and electrical properties ofCo-dopedZnOfilms can be tuned by careful control of oxygen partial pressure. In addition, it was further demonstrated that the oxygen vacancy defect is absolutely necessary to induce ferromagnetic couplings inCo-dopedZnOfilms.

Keywords: Magnetic properties; electrical properties; oxygen partial pressure (search for similar items in EconPapers)
Date: 2011
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DOI: 10.1142/S0218625X11014503

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