PREPARATION AND FERROELECTRIC PROPERTIES OF LEAD-FREEA0.5Bi0.5TiO3(A = NaORK) THIN FILMS

Y. L. Ding, X. H. Zhang, C. H. Yang (), X. Y. Zhang and H. L. Yang
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Y. L. Ding: School of Materials Science and Engineering, University of Jinan, Jinan 250022, P. R. China
X. H. Zhang: Real Estate Association of Shandong Province, Jinan 250001, P. R. China
C. H. Yang: School of Materials Science and Engineering, University of Jinan, Jinan 250022, P. R. China
X. Y. Zhang: School of Materials Science and Engineering, University of Jinan, Jinan 250022, P. R. China
H. L. Yang: School of Information Science and Engineering, Shandong University, Jinan 250100, P. R. China

Surface Review and Letters (SRL), 2011, vol. 18, issue 03n04, 121-125

Abstract: Both ferroelectricNa0.5Bi0.5TiO3(NBT) andK0.5Bi0.5TiO3(KBT) are considered as the best known lead-free materials. In this experiment, we prepared NBT and KBT thin films onPt/TiO2/SiO2/Sisubstrates by metalorganic solution deposition. The structural properties and surface morphologies were measured using X-ray diffraction and atomic force microscopy. The NBT and KBT films show higher leakage currents due to the oxygen vacancies in the films. The remanent polarization and coercive field of NBT (KBT) thin film are 9 (5.2) μC/cm2and 50 (25) kV/cm at an applied electric field of 150 kV/cm. The relative dielectric constants of NBT and KBT are 340 and 316 at 1 MHz, respectively.

Keywords: Ferroelectrics; thin films; atomic force microscopy; electrical properties (search for similar items in EconPapers)
Date: 2011
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DOI: 10.1142/S0218625X11014552

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