BUFFER LAYER EFFECTS ON MAGNETOELECTRIC COUPLING OFNi/Pb(Zr0.52Ti0.48)O3BILAYERS

K. Bi, Z. L. He and Y. G. Wang ()
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K. Bi: College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, P. R. China
Z. L. He: College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, P. R. China
Y. G. Wang: College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, P. R. China

Surface Review and Letters (SRL), 2011, vol. 18, issue 05, 177-181

Abstract: Magnetoelectric (ME)Ni/Pb(Zr0.52Ti0.48)O3bilayers have been successfully prepared by hydrothermal method usingTias buffer layer. The hydrothermal mechanism of PZT thin film deposited ontoNilayer has been discussed. The structure and ferroelectric properties of the deposited PZT thin films are characterized by X-ray diffraction and ferroelectric testing. The ME voltage coefficient of theNi/PZT bilayers gradually decreases as the thickness of buffer layer increases because the interface coupling of theNi/PZT layers gradually decreases. The large ME coefficient makes theseNi/PZT bilayers possible for applications in multifunctional devices such as electromagnetic sensor, transducers and microwave devices.

Keywords: Magnetoelectric; buffer layer; hydrothermal method (search for similar items in EconPapers)
Date: 2011
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DOI: 10.1142/S0218625X11014631

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