STM OBSERVATION OF GRAPHENE FORMATION USINGSiC-ON-INSULATOR SUBSTRATES

M. Naitoh (), M. Okano, Y. Kitada, Y. Sasaki, Y. Okubo, D. Edamoto, M. Nakao, I. Omura and T. Ikari
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M. Naitoh: Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550, Japan
M. Okano: Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550, Japan
Y. Kitada: Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550, Japan
Y. Sasaki: Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550, Japan
Y. Okubo: Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550, Japan
D. Edamoto: Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550, Japan
M. Nakao: Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550, Japan
I. Omura: Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550, Japan
T. Ikari: Ube National College of Technology, 2-14-1 Tokiwadai, Ube, Yamaguchi 755-8555, Japan

Surface Review and Letters (SRL), 2011, vol. 18, issue 05, 163-167

Abstract: We used scanning tunneling microscopy to investigate graphene formation on anSiC-on-insulator (SiC-OI) substrate. Annealing of anSiC-OIsubstrate with anSiCthickness of 1500 nm produced a graphene layer on theSiCsurface. When the thickness of theSiCfilm was 5 nm, a graphene layer was not formed on theSiCsurface. However, after annealing a C-coveredSiC-OIsubstrate with anSiCthickness of 5 nm, a graphene layer formed on theSiO2surface.

Keywords: Graphene; SiC-OI; STM; surface structure; SiCsurface decomposition method (search for similar items in EconPapers)
Date: 2011
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DOI: 10.1142/S0218625X11014643

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