RAMAN AND OPTOELECTRONIC PROPERTIES OFZn1-xMgxOTHIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

Q. L. Huang, L. Fang (), H. B. Ruan, B. D. Guo, F. Wu and C. Y. Kong
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Q. L. Huang: Department of Applied Physics, Chongqing University, Chongqing 400044, China
L. Fang: Department of Applied Physics, Chongqing University, Chongqing 400044, China;
H. B. Ruan: Department of Applied Physics, Chongqing University, Chongqing 400044, China
B. D. Guo: Department of Applied Physics, Chongqing University, Chongqing 400044, China
F. Wu: Department of Applied Physics, Chongqing University, Chongqing 400044, China
C. Y. Kong: Department of Physics, Chongqing Normal University, Chongqing 400047, China

Surface Review and Letters (SRL), 2011, vol. 18, issue 05, 189-195

Abstract: A series ofZn1-xMgxO(x = 0 ~ 0.16)films have been prepared on glass substrates by RF magnetron sputtering. The structure, surface morphology, composition, optical and electrical properties of the films were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), Raman spectroscopy, UV-Vis spectrophotometer and Hall measurement, respectively. It reveals that the obtained films are uniform hexagonal wurtzite polycrystalline with grain size about 100 nm.The optical transmittance are over 80% and the band gap(Eg)has linear relationship withMgcontent:Eg = 1.67x + 3.274(eV)(0

Keywords: ZnMgO; ZnO; Raman spectroscopy; optical property; electrical property; magnetron sputtering (search for similar items in EconPapers)
Date: 2011
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DOI: 10.1142/S0218625X11014709

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